GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

Tunnel Barrier Engineering for Non-Volatile Memory

Tunnel oxide of non-volatile memory (NVM) devices would be very difficult to downscale if ten-year data retention were still needed. This requirement limits further improvement of device performance in terms of programming speed and operating voltages. Consequently, for low-power applications with Fowler-Nordheim programming such as NAND, program and erase voltages are essentially sustained at ...

Non-volatile memory based on nanostructures.

Photo-reactive charge trapping memory based on lanthanide complex

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lantha...

Charge trapping on defects in AlGaN/GaN field effect transistors

The presence of electronic traps in GaN-based devices limits device performance and reliability. Crystallographic defects in the bulk and electronic states on the surface act as trapping centers. We review the trapping phenomena in GaN-based high electron mobility transistors and discuss a characterization method, current transient spectroscopy, applied for trap identification. Probing the char...

Chalcogenide-Based Non-Volatile Memory Technology

– Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polycrystalline state that is highly reflective and low in resistance. The application of this commercially proven technology to create dense, high-speed, non-vol...